2 edition of Dose effects in gas ion sputtering of gold. found in the catalog.
Dose effects in gas ion sputtering of gold.
C. M. Hicks
PhD thesis, Electrical Engineering.
Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials.A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM). However, while the SEM uses a focused beam of electrons to image the sample in. For each depth profile in figure 3, the sputter time was converted to Ar+ ion dose using the relation: e j t Ion dose b (1) where jp is primary ion current density, e is the charge on the ion and t is sputter time. From the depth profiles (Figure 3), the Ar+ ion dose (D z) required to etch the In film of a known.
sputtering reduces the effects of the irradiation of the high-energy particles. In off-axis sputtering, the substrates are settled at the outside of the discharge plasma. The thickness distribution of thin films deposited by off-axis sputtering will be larger than that for on-axis sputtering. The sputtering yield of a normal piece of flat gold should be of the order of 50 atoms per ion," said Dr Greaves. "In the case of rods we expected it to be greater, because the geometry is much.
Sputtering yields have been measured for neon, argon and krypton sputtering of gold and for argon and tellurium sputtering of gallium arsenide in the energy range from 50 to keV. Values of yields, estimated by activation analysis of sputtered deposits, are compared with other experimental results and with theory and are shown to be too high as a result of errors in ion dose measurement. screening effect of the position charge in front of cathode • Positive ions entering the dark space are accelerated toward the cathode (target), bombarding (sputtering) the target ¬atoms locked out from the target transport to the substrate (momentum transfer, not evaporation!) ¬generate 2nd electrons that sustains the discharge (plasma).
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Measurements are reported of the sputtering yields of gold using Arn+ gas cluster ion beams of energies E of 5, 10, and 20 keV with ≤ n ≤ In measuring the sputtering yields for 30 nm gold layers on silicon wafers with a thin thermal oxide, the analysis is conducted using SIMS with 25 keV Bi3+ primary ions.
The measured Aut– signals for 1 ≤ t ≤ 6 show an enhancement of Cited by: Measurements are reported of the sputtering yields of gold using Ar n + gas cluster ion beams of energies E of 5, 10, and 20 keV with ≤ n ≤ In measuring the sputtering yields for 30 nm gold layers on silicon wafers with a thin thermal oxide, the analysis is conducted using SIMS with 25 keV Bi 3 + primary ions.
The measured Au t – signals for 1 ≤ t ≤ 6 show an enhancement of Cited by: Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer.
Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution.
Dose effects in gas ion sputtering of gold. Author: Hicks, C. ISNI: Awarding Body: University of Salford Current Institution: University of Salford Date of Award: Availability of Full Text: Access from EThOS.
The sputtering ratio from plycrystalline Au, was measured as a function of ion energies. The gold specimens were bombarded with inert gas ions (A + and Xe +) of the energie from 20 to 50 coefficients of cathode sputtering were determined experimentally: by gravimetric analysis of weight losses during the bombardment and by spectrophotometric analysis of gold deposit after being Cited by: The sputtering coefficient of polycrystalline gold bombarded by 10–40 keV Ar ions has been measured as a function of total ion dose and shown to exhibit oscillations in magnitude between 30 and.
The sputtered depth of these metals was measured by contacted surface profiler. Fig. 2 shows the ion dose dependence of the sputtered depth. The sputtered depth was in proportion to the ion dose. No remarkable dose effects appeared in the Ar cluster ion sputtering.
The increase of sputtering yields of a rough target surface has been reported . The sputter effect of a keV GA + focused ion beam (FIB) was investigated concerning the angular dependence of the sputter yield and the redeposition characteristics of sputtered gold particles.
The former was determined by evaluating the sufficient ion dose for the complete removal of a μm thick electroplated gold layer. these sources worldwide. In contrast to sputtering with mon-atomic ions, gas cluster sputtering may show threshold effects at energies commonly used in practical depth proﬁling.
Cluster energies are often in the range E¼2keV–20keV,with clusters having a mean size range of n¼ to atoms. The average energy per atom, e.
Argon Gas Cluster-Ion Beam sources are likely to become widely used on x-ray photoelectron spectroscopy and secondary ion mass spectrometry instruments in the next few years. At typical energies used for sputter depth profiling the average argon atom in the cluster has a kinetic energy comparable with the sputter threshold, meaning that for the first time in practical surface.
The sputtering yields of nanoparticles are expected to be higher than those for traditional flat films because of the higher surface area and lower volume to dissipate the primary ion energy. In the present study, gold nanoparticles in the size range 10 to nm, dispersed on a silicon wafer, are studied by secondary ion mass spectrometry (SIMS) during sputtering by 20 keV C60++ and by.
Sputtering yields of gold (Au) by noble gas (He, Ne, Ar, Kr or Xe) ions have been measured in the low injection energy range 25–eV. The yield data presented here were obtained from mass-selected ion beam sputtering experiments, in which the ion beam has a very narrow energy spread and contains no impurity ions.
3. CONCLUSIONS The sputtering yield results of both Wehner and Oechsner represent useful data bases for low energy inert gas ions. The measurements, however, do show contamination effects clearly related to the reactivity of the target with oxygen.
These effects are strong in Wehner's data and are still present in those of Oechsner. Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target.
Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions.
Effect of periodic table. Sputter yields were measured for metal elements in given rows of the periodic table using eV Ar ions (Ref. 17).In the sequence Zr, Nb, Mo, Ru, Pd, and Ag, there was a continuous rise in S from ∼ to about Similar, although smaller, increases in S were observed for those elements lying in the row between Ti and Cu, as well as the row between Ta and Au.
Both materials have identical sputtering yields, and we show that organic delta layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling.
We demonstrate, using a C60 ion source, that the sputtering yield, S, diminishes with ion dose and that the depth resolution also degrades. A model alkane molecule, triacontane, is used to assess the effects of condensed gold and silver nanoparticles on the molecular ion yields upon atomic (Ga + and In +) and polyatomic (C 60 + and Bi 3 +) ion bombardment in metal-assisted secondary ion mass spectrometry (MetA-SIMS).Molecular films spin-coated on silicon were metallized using a sputter-coater system, in order to deposit controlled.
The yields were found to be independent of gas pressure and ion current density. Sputtering sets in substantially at approximately the same ion energy for the various metal‐gas combinations ( SIMS Tutorial: Theory.
This SIMS theory tutorial includes the uses of SIMS, with explanations of Ion Beam Sputtering and other effects. Today, SIMS is widely used for analysis of trace elements in solid materials, especially semiconductors and thin films.
The SIMS ion source is one of only a few to produce ions from solid samples without prior vaporization. Sputtering sets in substantially at approximately the same ion energy for the various metal‐gas combinations (40 to 60 ev) but with increasing ion energy rises differently for different materials.
The author's earlier work on computer simulation of density effects in sputtering is extended to higher energies and oblique incidence of bombarding ions. Sputtering of amorphous Ge with an.
The sputtering of materials using inert gas primary ions, particularly argon, is a routine part of surface and thin film analysis for compositional depth profiling using Auger electron spectroscopy (AES) or x-ray photoelectron spectroscopy (XPS) [1, 2].Other inert gases are also used to improve the depth resolution, or to ensure that spectral peaks from the inert gas are well separated from.
The sputtering of gold by neon and xenon ions with energies from 40 to eV has been measured by determining the change in electrical resistance of thin gold films.
With xenon ions the yield is proportional to ion energy, and the value at eV ( atoms/ion) is lower than that found previously with argon.